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SILICON GERMANIUM SOLUTIONS
We supply Silicon Germanium in forms like ingots, wafers, films, and alloys, designed for high-speed electronics, optoelectronics, and semiconductor devices. Our global supply chain offers enhanced mobility and thermal stability, ensuring cutting-edge performance and reliability.
SPECIFICATIONS
Chemical Composition: Silicon Germanium (SiGe), an alloy of silicon and germanium, with customizable Si/Ge ratios, optimized for high-frequency applications.
Forms:
Ingots: Large blocks for wafer production.
Wafers: Thin discs for integrated circuits.
Films: Thin layers for optoelectronic devices.
Alloys: Custom blends for specific applications.
Weights:
Ingots: 10-80 kg per unit.
Wafers: 0.01-0.4 kg per batch.
Films: 0.005-0.2 kg per roll.
Alloys: 1-20 kg per unit.
Purity Levels:
6N (99.9999%): Standard purity for general use.
7N (99.99999%): High purity for electronics.
8N (99.999999%): Ultra-pure for advanced semiconductors.
9N (99.9999999%): Maximum purity for niche applications.
Doping Types:
Boron-Doped (p-type): For positive charge carriers.
Phosphorus-Doped (n-type): For negative charge carriers.
Undoped: Raw alloy for custom doping.
Indium-Doped: Tailored properties for optoelectronics.
Sizes:
Ingots: 100-250mm diameter, 100-400mm length.
Wafers: 100-200mm diameter, 0.1-1mm thickness.
Films: 100-500mm width, 200-1000mm length, 0.01-0.5mm thickness.
Alloys: 50-200mm max dimension, 5-50mm thickness.
Certificates:
RoHS Compliance: Ensures no hazardous substances, safe for electronics and EU markets.
ISO 9001: Guarantees consistent quality management throughout production.
EN 10204 3.1: Confirms compliance with order specs, backed by independent test results.