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CARBIDE-SI SOLUTIONS
We supply Silicon Carbide in forms like ingots, powders, wafers, and grains, designed for power electronics, abrasives, and high-temperature applications. Our global supply chain offers exceptional hardness and thermal conductivity, ensuring durable and efficient performance.
SPECIFICATIONS
Chemical Composition: Silicon Carbide (SiC), a compound of silicon and carbon, available in polytypes (e.g., 4H, 6H), with controlled impurities for specific properties.
Forms:
Ingots: Large blocks for wafer production.
Powders: Fine particles for abrasive and coating use.
Wafers: Thin discs for semiconductor devices.
Grains: Granular forms for industrial applications.
Weights:
Ingots: 5-50 kg per unit.
Powders: 25-200 kg per bag.
Wafers: 0.01-0.3 kg per batch.
Grains: 10-100 kg per unit.
Purity Levels:
99%: Standard purity for abrasive applications.
99.5%: High purity for industrial use.
99.9% (3N): Ultra-pure for electronics-grade SiC.
99.99% (4N): Maximum purity for advanced semiconductors.
Doping Types:
Nitrogen-Doped (n-type): For enhanced electron mobility.
Aluminum-Doped (p-type): For hole conduction.
Undoped: Raw SiC for custom doping.
Vanadium-Doped: Tailored properties for specific devices.
Sizes:
Ingots: 50-150mm diameter, 50-200mm length.
Powders: 0.1-100 microns particle size.
Wafers: 50-150mm diameter, 0.2-1mm thickness.
Grains: 0.5-10mm particle size.
Certificates:
RoHS Compliance: Ensures no hazardous substances, safe for electronics and EU markets.
ISO 9001: Guarantees consistent quality management throughout production.
EN 10204 3.1: Confirms compliance with order specs, backed by independent test results.